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MoSe2/二硒化钼
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MoSe2/二硒化钼

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8700

MoSe2 (2H Molybdenum Diselenide)

       MoSe2 (2H phase) is a semiconductor having an indirect band gap of ~1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. MoSe2 belongs to the group-VI transition metal dichalcogenides (TMDC). To buy MoSe2 crystals please click here.
    
       The 2H phase Molybdenum Diselenide crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, are hexagonal shaped and have a metallic appearance. We produce both p-type and n-type MoSe2, having a typical charge carrier density of ~1015cm-3 at room temperature. A selection of peer review publications on the MoSe2 we sell can be found below.



Crystal size~10 mm
Electrical propertiesSemiconductor, p-type (n-type is also available)
Crystal structurehexagonal
Unit cell parametersa = b = 0.329 nm, c = 1.289 nm, α = β = 90°, γ = 120°
TypeSynthetic
Purity>99.995 %
Characterized byXRD, Raman, EDX, Hall measurement
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The single crystal MoSe2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.

Raman, XRD and EDX on MoSe2:

Click on an image to zoom


X-ray diffraction on a MoSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal MoSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal MoSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal MoSe2. Measurement was performed with a 785 nm Raman system at room temperature.



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