$GaSe\硒化镓$

GaSe\硒化镓

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GaSe (2H phase Gallium Selenide)

GaSe (2H phase) is a semiconductor with an indirect band gap of ~2.1 eV. GaSe has been used as a semiconductor, photoconductor, a second harmonic generation crystal in nonlinear optics and as a far-infrared conversion material. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GaSe belongs to the group-13 post-transition metal monochalcogenides.

The 2H phase of Gallium Selenide has a typical lateral size of ~0.6-0.8 cm and has a dark-copper metallic appearance.

GaSe publications

2H phase GaSe crystal properties

Crystal size	~10 mm
Electrical properties	Semiconductor
Crystal structure	Hexagonal
Unit cell parameters	a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ =120°
Type	Synthetic
Purity	>99.995 %
Characterized by	XRD, Raman, EDX

The single crystal GaSe is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX:Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system