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WSe2 (Tungsten Diselenide)
WSe2 is a semiconductor with an indirect band gap of ~1.3 eV, monolayer WSe2 has a direct band gap. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Tungsten Diselenide belongs to the group-VI transition metal dichalcogenides (TMDC).
The WSe2 crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, are hexagonal shaped and have a metallic appearance. We produce both n-type and p-type WSe2, having typical charge carrier densities of ~1015cm-3 at room temperature. A selection of peer review publications on the WSe2 sold by HQ Graphene can be found below.
WSe2 crystal properties
| Crystal size | ~10 mm |
| Electrical properties | Semiconductor, p-type (we also have n-type available) |
| Crystal structure | hexagonal |
| Unit cell parameters | a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120° |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX, Hall measurement |
| More information? | Please contact us by email or phone |
The single crystal WSe2 is characterized using:
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.
Raman, XRD and EDX on WSe2:
X-ray diffraction on a WSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal WSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal WSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal WSe2. Measurement was performed with a 785 nm Raman system at room temperature.
