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| Crystal size | ~10 mm |
| Electrical properties | Metal, Superconductor (Tc~7.2K), Charge Density Waves (CDW) system, Tcdw ~33K |
| Crystal structure | hexagonal |
| Unit cell parameters | a = b = 0.344 nm, c = 1.255 nm, α = β = 90°, γ = 120° |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on 2H NbSe2:
X-ray diffraction on a 2H phase NbSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8
Powder X-ray diffraction (XRD) of a single crystal 2H NbSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal 2H NbSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal 2H NbSe2. Measurement was performed with a 785 nm Raman system at room temperature.
