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二硒化铪
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二硒化铪

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HfSe2 (Hafnium Diselenide)

HfSe2 is a semiconductor with an indirect bandgap of ~1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Hafnium Diselenide belongs to the group-IV transition metal dichalcogenides (TMDC). To buy hafnium diselenide crystals please click here.

The HfSe2 crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped, and have a metallic appearance. A selection of peer review publications on the HfSe2 crystals we sell can be found below.



HfSe2 crystal properties

Crystal size~10 mm
Electrical propertiesSemiconductor
Crystal structureHexagonal
Unit cell parametersa = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120°
TypeSynthetic
Purity>99.995 %
Characterized byXRD, Raman, EDX
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The single crystal HfSe2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on HfSe2:

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X-ray diffraction on a Hafnium Diselenide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 3, 4, 5

Powder X-ray diffraction (XRD) of a single crystal HfSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal HfSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal HfSe2. Measurement was performed with a 785 nm Raman system at room temperature.



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