二硫化铪

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HfS2 (Hafnium Disulfide)

HfS2 is a semiconductor with an indirect band gap of ~2 eV. Single layer Hafnium Disulfide is predicted to have a direct band gap of ~1.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. HfS2 belongs to the group-IV transition metal dichalcogenides (TMDC). To buy HfS2 crystals please click here.

The Hafnium Disulfide crystals produced at HQ Graphene have a lateral size of ~0.6-0.8 cm, are hexagonal shaped and have a red transparent appearance. A selection of peer review publications on the HfS2 we sell can be found below.

HfS2 publications

HfS2 crystal properties

Crystal size	~10 mm
Electrical properties	Semiconductor
Crystal structure	Hexagonal
Unit cell parameters	a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120°
Type	Synthetic
Purity	>99.995 %
Characterized by	XRD, Raman, EDX
More information?	13381379835

HfS2 Pricing

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The single crystal HfS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system