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Black phosphorus is a semiconductor with a band gap of ~0.3 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers down to single layer phosphorus (phosphorene). We have also succeeded in the growth of an Phosphorus-Arsenic alloy which has a similar unit cell with the black phosphorus. For more information you can visit the product page of the Phosphorus-Arsenic alloy.
The black phosphorus crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm and have a metallic appearance. Due to the large flat surface the crystals are ideal for optical (ARPES) and scanning probe microscopy (STM, AFM, ...) measurements. A selection of peer review publications on the black phosphorus grown at HQ Graphene can be found below.

The single crystal black phosphorus is characterized using:

single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: 785nm Raman system

X-ray diffraction on a black phosphorus single crystal aligned along the (001) phane.XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to(001) with 1=1,2,3,4
Powder X-ray diffraction (XRD) of a single crystal black phosphorus. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal black phosphorus by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal black phosphorus. Measurement was performed with a 785nm Raman system at room temperature.